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Keynote Talk

Prof. Aloke Kanjilal

Shiv Nadar Institution of Eminence, Uttar Pradesh, India

Exploring Nanodomain Non-volatile Memory Behavior with Composite Materials

 

The advancement of the memristor-based artificial synapse has attracted a considerable interest for neuromorphic computing. Present memristive technology is mainly dominated by metal oxide-based memristors, though it requires precise structural and chemical engineering. Here, we show a novel approach for realizing electroforming free non-volatile memory devices in rf magnetron sputtering grown ZnO@ b -SiC composite film. A switching from high resistance state to achieved low resistance state is shown to be at an extremely low voltage of ~0.1V with a set/reset response speed of ~40/50 ns, where the device stability is found to be over 10 4 cycles with a retention of ~10 4 sec. This is shown to be associated with the formation of Zn 2 SiO 4 nanocrystals in an amorphous layer as conformed by detailed structural studies followed by chemical and microstructure analyses. This is interpreted in terms of the formation and dissolution of conductive filaments made of oxygen ions, though involvement of Ag + ions cannot be neglected in Ag/ZnO@ b -SiC/ITO device structure. The formation of conducting filaments has been confirmed by performing Conductive Atomic Force Microscopy. Finally, the excellent synaptic properties have been established and discussed for sustainable development of in-memory neuromorphic computing.